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RESEARCH COMMUNICATION PORTAL

논문 해외 국제전문학술지(SCI급) Analysis of the Properties of Tungsten Carbide Thin Films According to the Sputtering Radio Frequency Power

  • 학술지 구분 국제전문학술지(SCI급)
  • 게재년월 2020-10
  • 저자명 최원석,이석원,박영,김정현
  • 학술지명 SCIENCE OF ADVANCED MATERIALS
  • 발행처명 AMER SCIENTIFIC PUBLISHERS
  • 발행국가 해외
  • 논문언어 외국어
  • 전체저자수 4

논문 초록 (Abstract)

In this study, we investigated characteristics of tungsten carbide thin film according to carbon and tungsten ratio. Tungsten carbide thin film was co-sputtered on silicon substrate and glass substrates using an RF magnetron sputtering system. To analyze the characteristics according to the composition ratio of the tungsten carbide thin film, the RF powers of carbon/tungsten target were divided into 100 W/100 W, 125 W/75 W, 150 W/50 W, and 175 W/25 W, respectively. Hall measurement and 4 points probes were used to measure electrical properties of the tungsten carbide thin films. Raman and field emission scanning electron microscope (FE-SEM) analysis were performed.