논문 해외 국제전문학술지(SCI급) Growing Properties of Carbon Nanowalls According to the Hydrogen Gas Ratio
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2020-11
- 저자명 최원석,최혁주,강현일,박영,김정현
- 학술지명 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- 발행처명 AMER SCIENTIFIC PUBLISHERS
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 5
홈페이지논문 초록 (Abstract)
In this study, the growth characteristics of carbon nanowalls (CNWs), which are applied to many devices because of their high aspect ratio and excellent electrical characteristics thanks to their two-dimensional structure, were confirmed by changing the ratio of methane (CH4) and hydrogen (H-2) therein. In many studies, CNWs were grown using various chemical vapor deposition (CVD) or sputtering methods, with a mixture of CH4 and H-2 or argon (Ar) gas. To find the suitable rate, 25 sccm CH4, which is used as the source gas, was first injected into the chamber, and the characteristics were confirmed by changing the amount of H-2 gas from 0 to 50 sccm. Ultrasonically cleaned Si wafer was used as the substrate, and the CNW was grown for 10 minutes at microwave power (1300 W, 600 degrees C) using microwave-plasma-enhanced CVD (MPECVD).