논문 해외 국제전문학술지(SCI급) A 20-W Wide Bandwidth GaN HEMT Power Amplifier for VHF/UHF Applications
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2020-12
- 저자명 김주성,Kim, Y (Kim, Younghoon),Oh, S (Oh, Seongwon),Choi, J (Choi, Jaehyung),이동호,Cho, K (Cho, Kunhee),Lee, S (Lee, Sanghun),Ahn, CH (Ahn, Chi-Hyung)
- 학술지명 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
- 발행처명 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 8
홈페이지논문 초록 (Abstract)
In this article, broadband gallium nitride (GaN) high-electron-mobility transistor (HEMT) power amplifier with shunt-feedback and push-pull technique is presented. Shunt-feedback and push-pull realization provide the robust broad bandwidth covering very high frequency and low-frequency ultra high frequency (UHF) bands. The benefit due to the feedback presented in the form of shunt-shunt network on power amplifier module provides the linear and broadband frequency amplification. The push-pull topology provides enhanced efficiency and high power generation along with the cancellation of the second-order distortions and thus helps to compensate for the efficiency degradation from the feedback. These techniques are realized with the help of in-house designed GaN HEMT transistor, which provides high power, good efficiency, and high reliability (bandgap). The prototype was realized in 0.25-mu m GaN HEMT, operates from 30 to 520 MHz, and dissipates 650 mA of quiescent current from 28-V supply. The power amplifier delivered a saturated output power of >43 dBm and <1 dB gain flatness with >40% power added efficiency at 20 W output power. The linearity of the amplifier was characterized by the two-tone injection test. The measurement result shows that the third-order intermodulation distortion tones are below -35 dBc at 35 dBm output power.