논문 해외 국제전문학술지(SCI급) Solution-processed zirconium acetylacetonate charge-trap layer for multi-bit nonvolatile thin-film memory transistors
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2023-05
- 저자명 Song Lee, Jeong-In Lee, Chang-Hyun Kim, Jin-Hyuk Kwon, Jonghee Lee, Amos Boampong, and Min-Hoi Kim
- 학술지명 Science and Technology of Advanced Materials
- 발행처명 Taylor Francis LTD
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 7
홈페이지논문 초록 (Abstract)
The charge trap property of solution-processed zirconium acetylacetonate (ZAA) for solution-processed nonvolatile charge-trap memory (CTM) transistors is demonstrated. Increasing the annealing temperature of the ZAA from room temperature (RT) to 300°C in ambient, the carbon double bonds within the ZAA decreases. The RT-dried ZAA for the p-type organic-based CTM shows the widest threshold voltage shift (∆VTH ≈ 80 V), four distinct VTHs for a multi-bit memory operation and retained memory currents for 103 s with high memory on- and off-current ratio (IM,ON/IM,OFF ≈ 5Ⅹ104). The n-type oxide-based CTM (Ox-CTM) also shows a ∆VTH of 14 V and retained memory currents for 103 s with IM,ON/IM,OFF ≈ 104. The inability of the Ox-CTM to be electrically erasable is well explained with simulated electrical potential contour maps. It is deduced that, irrespective of the varied solution-processed semiconductor used, the RT-dried organic ZAA as CTL shows the best memory functionality in the fabricated CTMs. This implies that the high carbon double bonds in the low-temperature processed ZAA CTL are very useful for low-cost multi-bit CTMs in flexible electronics.