연구홍보포털

논문 초록 (Abstract)

We systematically investigated the mechanism of subtractive contact patterning (SCP) and demonstrated high-resolution organic light-emitting diodes (OLEDs) using this SCP process. Owing to the application of the SCP process to various types of organic semiconducting thin films, crystalline thin films (e.g., pentacene) generated patterns via the delamination mechanism and amorphous small molecule thin films (e.g., tris(8-hydroxyquinolinato)aluminum) generated patterns via the diffusion mechanism. In the pattern generation via diffusion, we reported that the higher the processing temperature and the longer the processing time were, the deeper was the pattern depth. In particular, the patterning speed was proportional to the temperature in an exponential function. SCP can be applied to doped small molecule-based thin films and limitedly applied to polymer thin films. Finally, a high-resolution OLED pattern of less than 10 μm wide was fabricated by applying the SCP process without any detrimental effects on the device performance. Furthermore, this SCP process was applied to flexible and curved thin films, which verified its potential use for roll-to-roll processes. This study provides a scientific and technological basis for the fabrication of high-resolution patterns of organic electronic devices such as OLEDs. KEYWORDS:subtractive contact patterning patterning organic materials high resolutionShow More 1. Introduction Jump To Organic electronics such as organic light-emitting diodes (OLEDs) and organic field-effect transistors have gained considerable attention owing to their potential applications to flexible electronics. (1−9) One of the important processes for fabricating these organic electronics is the patterning of organic semiconducting films. (10) In particular, for virtual reality/augmented reality displays, high-resolution patterns (several micrometers) are required for OLEDs. (11,12) For patterning of OLEDs, a fine metal mask (FMM) is primarily used, but FMM suffers from the difficulty of creating high-resolution patterns of several micrometers because of the sagging phenomenon of shadow masks, which results in shadowed areas among the pixels. Furthermore, various patterning methods such as orthogonal lithography, (13,14) sacrificial layer-assisted lift-off patterning, (15,16) and continuous microcontact printing (17) have been proposed. These approaches allow organic semiconductors to be repeatedly exposed to organic solvent or ultraviolet light, causing chemical damage or requiring repeated patterning processes that limit the practical application of these patterning methods. To create high-resolution patterns without any chemical damage or repetitive processes, subtractive contact patterning (SCP) has been examined. (18−26) In SCP, the organic semiconducting parts that are in contact with a stamp are etched out, leaving fine patterns that are complementary to the stamp patterns in the noncontact regions. (18,19) The produced patterns are not contaminated from contacting stamps and exposing UV light or organic solvent which are involved in typical patterning processes. In previous studies, the steps of fine pattern formation using SCP were divided into two main mechanisms: (1) delamination (20,22,26) where the thin film is torn off and (2) diffusion (18,19) where molecules comprising a thin film are diffused into nanoporous stamps, as shown in Figure 1. The previous studies only demonstrated different mechanism-based SCP processes with organic materials without drawing a rather comprehensive picture of the relationship between the organic-material types and SCP mechanisms. Figure 1 Figure 1. Schematic of the SCP processes: (a) contacting process, which is followed by two patterning mechanisms, namely, (b) delamination and (c) diffusion. In this study, we systematically investigated how the SCP mechanism depends on the organic-material characteristics. Thus, the SCP process was applied to various types of organic semiconducting thin films. According to the characteristics of the thin films, the patterning mechanisms (delamination or diffusion) were closely investigated. Furthermore, in the diffusion-based patterning process, we reported that the pattern depth varied as per the processing temperature and time. Moreover, the patterning rate, which was proportional to the exponential function of the processing temperature, could be controlled. By applying this SCP process, 10 μm wide high-resolution OLED patterns were created. We thus reported that the SCP process could be applied to curved substrates or doped thin films and limitedly applied to polymeric thin films. 2. Results and Discussion Jump To First, the SCP-processed patterns of various organic semiconductor materials were investigated to understand the patterning mechanisms. Figure 2 shows the optical microscopic images of the organic semiconducting patterns fabricated at 90 °C for 2 min. Figure 2a shows that in the area in contact with poly dimethylsiloxane (PDMS), an area where the pentacene was removed was observed despite the short contact time of 2 min. However, a certain area in contact with PDMS where the pentacene was not removed was similar to the area that was not in contact with PDMS. When pentacene was made to contact the PDMS stamps, a thin film appeared in two states: complete removal or almost no removal of pentacene. That is, some parts of the pentacene films were not etched out even after contacting with the PDMS stamps. This phenomenon is clearly shown in Figure S1a; Figure S1a shows that the area where the substrate was exposed by scratching the pentacene layer and that where pentacene was removed by the SCP process had the same color. If pentacene was patterned through diffusion process, overall parts contacted with the PDMS stamp were gradually etched out, unlike Figure S1a. Therefore, we could observe that pentacene was delaminated, that is, physically torn off through the SCP process, because in the etched region the substrate was exposed, demonstrating that the entire thickness of the pentacene layer was eliminated in a short time. Figures 2b–d show that tris(4-carbazoyl-9-ylphenyl)amine (TCTA), tris(8-hydroxyquinolinato) aluminum (Alq3), and N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB) formed patterns that were less than 10 μm wide, which was the pattern width of the PDMS stamps. Unlike the pentacene case, overall parts contacted with the PDMS stamp were homogeneously etched out. The organic layers of TCTA, Alq3, and NPB were not completely removed as much as the deposited thickness, and patterns with a residual layer were formed, as more clearly shown in Figures S1b–d. The color of the area in contact with PDMS was different from that of the scratched area of the organic layers, i.e., the exposed substrate parts. We concluded that other organic semiconductors except for pentacene created patterns with residual layers. Figure 2 Figure 2. Optical microscopic images of the (a) pentacene, (b) TCTA, (c) Alq3, and (d) NPB patterns after the SCP process at 90 °C for 2 min. To understand the patterning mechanism of the organic materials involving the residual layers shown in Figure 2 (the delamination phenomena are not shown), additional SCP processes were conducted. Figures 3a–d show the surface profiles of the 80 nm thick Alq3 thin films, which were SCP-processed at 50, 90, 130, and 170 °C. The surface profiles were also obtained from atomic force microscopy (AFM) as for the 80 nm thick Alq3 thin films at 50 °C (Figure S2). Note that the SCP process was performed below the glass transition temperature (Tg) to prevent crack formation in the organic semiconductors. The pattern depth gradually increased as the SCP process time increased, and the higher the process temperature was, the faster did the depth of the pattern increase. For example, at 50 °C, a 40 nm thick film was etched out after 90 min, but at 170 °C, a thin film of 40 nm or more was eliminated in 30 s. This trend was exhibited in the TCTA and NPB materials (Figure S3). Note that because the Tg values of TCTA and NPB were 152 and 102 °C, respectively, the SCP process was performed at 90, 130, and 150 °C for 100 nm thick TCTA and at 40, 50, and 90 °C for 90 nm thick NPB. Thus, the amorphous organic semiconductors of Alq3, TCTA, and NPB demonstrated that the pattern depth increased as the temperature and processing time increased. Figure 3 Figure 3. Surface profiles of the SCP-processed 80 nm thick Alq3 thin film at (a) 50, (b) 90, (c) 130, and (d) 170 °C. Figures 4a–c show the change in the pattern depth according to the processing temperature and time using the data shown in Figures 3 and S3. Unlike the pentacene case, overall parts contacted with the PDMS stamp were gradually etched out with time. The depth approximately linearly changed with time. In Figure 4a, when a depth corresponding to the thickness of the thin film (90 nm thick Alq3 film) was reached, the depth did not change any more. The pattern velocity is indicated by the slope of the change with time. Figure 4a shows that Alq3 exhibited a patterning speed of 0.69 nm/min at a low temperature of 50 °C, and the speed increased as the temperature increased, indicating a high pattern speed of 68 nm/min at 170 °C. The same trend was found in TCTA and NPB. Figures 4b,c show that higher patterning speeds were observed at higher temperatures. Because the organic semiconducting molecules diffused into the PDMS nanopores at the interface between the PDMS stamp and organic layers, the patterning speed was controlled according to the processing temperature. (18,19) This relationship cannot be shown for materials exploiting delamination process for patterning. When the PDMS nanopores were sufficiently filled with organic semiconducting molecules, the patterning rate could be saturated for thick organic layers. (18,19) On the basis of Figures 4a–c, the diffusion rate of these organic materials based on the temperature change is shown in Figure 4d. The patterning speed was proportional to the temperature in the log scale, which indicated that the patterning speed of amorphous organic semiconductors could be controlled by the patterning temperature, similar to the molecular-diffusion theory. (18) Interestingly, in comparison with Alq3 and NPB that exhibited a similar patterning speed with the processing temperature, TCTA exhibited a lower patterning speed. Considering that during the SCP process the organic molecules in contact with the nanoporous PDMS stamps were absorbed into the PDMS stamp, the patterning speed depends on the molecular interaction between the PDMS stamps and the organic materials which intend to be patterned. This molecular interaction between these two different materials are affected by molecular weight, molecular structures (e.g., component atoms and bonding types), etc. (27,28) Figure 4 Figure 4. Pattern depth versus patterning time during the SCP process of (a) Alq3, (b) TCTA, and (c) NPB. (d) Graph of 1/T versus diffusion speed of the different materials. To verify the applicability of the SCP process to multilayer organic semiconductor structures, the OLED device shown in Figure 5a was fabricated. Here, MoO3, NPB, and Alq3 were sequentially deposited on ITO-patterned glasses through thermal evaporation, and only the top Alq3 layer was patterned through the appropriate control of SCP process. To prevent reorientation of NPB, the SCP process was performed at a temperature lower than Tg of NPB of 102 °C. In other words, the Alq3 layer was patterned at 90 °C for 10 min and 30 s. Then, 2,2′,2″-(1,3,5-benzinetriyl)tris(1-phenyl-1H-benzimidazole) (TPBi) and LiF/Al cathode layers were deposited, followed by encapsulation. Figures 5b and 5c show the patterned OLED that emitted light in the form of 10 μm wide lines in the electroluminescent and photoluminescent spectra, respectively, which confirmed that Alq3 was patterned at 10 μm wide high resolution (Table S1). Figure 5d shows the current density–voltage–luminance characteristics of the 10 μm wide OLED patterns. Figure 5e shows that the patterned OLED exhibited almost same electroluminescent spectra with that of the unpatterned REF OLED, indicating that the SCP process could produce high-resolution OLEDs without any detrimental effects on the OLED optoelectrical properties. Figure 5 Figure 5. (a) Schematic of OLED patterned by the SCP process. Optical microscopic images of (b) electroluminescence of 10 μm wide OLED patterns at 6 V and (c) photoluminescence of these patterns. (d) Current density–voltage–luminance characteristics and (e) electroluminescence spectrum of SCP-processed OLED. Figures 6a and 6b show the optical images of the SCP-processed patterns on the curved substrate with radius of 11 mm and the corresponding approximately 7 μm wide patterns. Clear organic semiconducting patterns were formed on the curved surface of the glass with a radius of 11 mm. In addition, the Alq3 layer was clearly patterned on the flexible substrate (poly(ethylene terephthalate)) through the SCP process (Figure S4). From this result, this SCP process could be observed to have the potential for applicability to roll-to-roll processes. Furthermore, the SCP process was applied to a 20% doped NPB organic semiconductor (NPB:Rb2CO3) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer, as shown in Figures 6c,d. The 20% doped NPB (NPB:Rb2CO3) and PEDOT:PSS took a long time to create patterns compared with the pristine small molecules of TCTA, Alq3, and NPB. Therefore, the SCP process was conducted for 15 min and 5 h, respectively. However, in the PEDOT:PSS case, only an 8 nm depth was patterned in spite of the very long processing time of 5 h. This is because polymers such as PEDOT:PSS are difficult to be diffused into nanopores of the PDMS stamps due to heavy weight from their long chains. (29,30) These NPB:Rb2CO3 and PEDOT:PSS also exhibited line patterns with residual layers, which were similar to the SCP patterning phenomenon of TCTA, Alq3, and NPB. Figure 6 Figure 6. (a) Optical image of the SCP-processed patterns on a curved glass and (b) optical microscopic image of the corresponding patterns with a width of approximately 7 μm. Optical microscopic images of (c) doped organic semiconductor (NPB:Rb2CO3) and (d) polymer (PEDOT:PSS) after SCP processing for 15 min and 5 h, respectively. 3. Conclusion Jump To We have systematically investigated the patterning mechanism of SCP and demonstrated high-resolution OLEDs through this SCP patterning process. From the application of the SCP process to various types of organic semiconducting thin films, crystalline thin films such as pentacene created patterns mainly via the delamination mechanism and amorphous thin films such as Alq3, TCTA, and NPB generated patterns via the diffusion mechanism. In the case of pattern creation by diffusion, we found that the higher the processing temperature and the longer the processing time were, the deeper was the pattern depth. More specifically, the patterning speed was found to be proportional to the temperature based on an exponential function. SCP can be applied to doped small molecule-based thin films and limitedly applied to polymer thin films. Finally, high-resolution OLED patterns of less than 10 μm wide were fabricated by applying the SCP process. Furthermore, this SCP process was applied to flexible and curved thin films, which verified its potential use for roll-to-roll processes. This study provides a scientific and technological basis for fabrication of high-resolution patterns of organic electronic devices such as OLEDs. 4. Experimental Procedures Jump To An Si substrate with thermally grown SiO2 was prepatterned using conventional photolithography to fabricate a 10 μm line-width mold with a 5 μm space. A PDMS base and a curing agent (Sylgard 184) were mixed at a 10:1 weight ratio. The mixture was poured on a Si mold prepatterned with line and space and placed under vacuum to remove air bubbles in PDMS. After the air bubbles were completely removed, PDMS on the Si mold was annealed at 70 °C for 2 h to fabricate elastomeric PDMS stamps. (18,19) Substrates, including glasses and Si wafers with SiO2, were ultrasonicated in acetone and isopropyl alcohol for 15 min and dried in an oven to remove the residual solvent. Small molecule organic semiconductors were thermally deposited at a pressure of 10–7 Torr. The deposition speed was 0.5 Å/s for a 90 nm thick pentacene layer, 1 Å/s for 80 nm thick Alq3, and 2 Å/s for both 90 nm thick NPB and 100 nm thick TCTA. A polymer semiconductor, or PEDOT:PSS, was spin-coated and dried at 90 °C for 60 min. To create the patterns, the prepatterned PDMS stamps were made to contact the organic semiconducting thin films and annealed until complete etching of the contacted parts of the films (Figure 1). The width and depth of fabricated patterns were determined using a surface profiler (Dektak-8, Veeco), and optical images were obtained using an optical microscope (BX-43, Olympus). To fabricate patterned OLEDs, the ITO-patterned glasses were ultrasonicated in acetone for 20 min and annealed in isopropyl alcohol at 220 °C for 20 min. Then, 10 nm thick MoO3, 70 nm thick NPB, and 30 nm thick Alq3 layers were deposited at 0.1, 2, and 1 Å/s, respectively, using thermal evaporation. The patterned PDMS stamps were made to contact the organic layer and annealed at 90 °C for 10 min and 30 s. This patterning process was performed under N2 conditions. After the patterning process, TPBi was thermally evaporated at 1 Å/s to form a 20 nm thick film, and as a cathode, 1.5 nm thick LiF and 100 nm thick Al were evaporated at 0.5 and 4 Å/s, respectively. The optoelectrical property of patterned OLED was analyzed by sweeping the voltage from 0 to 8 V at a 0.5 V step using a multimeter (Keithley2400) and a spectrum scanner (PR-650). Supporting Information Jump To The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.3c00080. Optical microscopic images of various organic patterns, surface profiles of the SCP processes of various organic thin films (PDF) Systematic Investigation of Subtractive Contact Patterning for High-Resolution Organic Electronic Devices 0 views 0 shares 0 downloads Skip to figshare navigation Expand Terms & Conditions Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html. Author Information Jump To Corresponding Author Min-Hoi Kim - Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, South Korea; Orcidhttps://orcid.org/0000-0001-6462-323X; Email: mhkim8@hanbat.ac.kr Authors So-Hyeon Lee - Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, South Korea Hea-Lim Park - Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, South Korea Seung-Hoon Lee - Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, South Korea Eun-Kyung Noh - Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, South Korea Subin Hwa - Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, South Korea Jonghee Lee - Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, South Korea Jae-Hyun Lee - Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, South Korea Author Contributions S.-H.L. and H.-L.P. contributed equally to this work. Notes The authors declare no competing financial interest. Acknowledgments Jump To This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education (2018R1A6A1A03026005) and the Korea government (Ministry of Science and ICT) (No. 2021R1C1C2012074). References Jump To This article references 30 other publications. 1Han, D.; Khan, Y.; Ting, J.; King, S.; Yaacobi-Gross, N.; Humphries, M. J.; Newsome, C. J.; Arias, A. C. Flexible Blade-Coated Multicolor Polymer Light-Emitting Diodes for Optoelectronic Sensors. Adv. Mater. 2017, 29, 1606206, DOI: 10.1002/adma.201606206 [Crossref], Google Scholar 2Park, H.-L.; Kang, S.; Suh, J.-H.; Lee, S.-D.; Lee, S.-H. Balance of surface energy difference between wetting and dewetting regions for patterning solution-processed organic light-emitting diode. Org. Electron. 2021, 95, 106203, DOI: 10.1016/j.orgel.2021.106203 [Crossref], [CAS], Google Scholar 3Ro, J.-S.; An, H.-M.; Park, H.-L. Electrolyte-gated synaptic transistors for brain-inspired computing. Jpn. J. Appl. Phys. 2023, 62, SE0801, DOI: 10.35848/1347-4065/acaca4 [Crossref], Google Scholar 4Park, H.-L.; Kim, M.-H.; Kim, H.; Lee, S.-H. Self-Selective Organic Memristor by Engineered Conductive Nanofilament Diffusion for Realization of Practical Neuromorphic System. Adv. Electron. Mater. 2021, 7, 2100299, DOI: 10.1002/aelm.202100299 [Crossref], [CAS], Google Scholar 5Kim, K.-N.; Sung, M.-J.; Park, H.-L.; Lee, T.-W. Organic Synaptic Transistors for Bio-Hybrid Neuromorphic Electronics. Adv. Electron. Mater. 2022, 8, 2100935, DOI: 10.1002/aelm.202100935 [Crossref], [CAS], Google Scholar 6Park, H.-L.; Lee, T.-W. Organic and perovskite memristors for neuromorphic computing. Org. Electron. 2021, 98, 106301, DOI: 10.1016/j.orgel.2021.106301 [Crossref], [CAS], Google Scholar 7Kim, M.-H.; Park, H.-L.; Kim, M.-H.; Jang, J.; Bae, J.-H.; Kang, I. M.; Lee, S.-H. Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system. npj Flex. Electron. 2021, 5, 34, DOI: 10.1038/s41528-021-00132-w [Crossref], Google Scholar 8Park, H.-L.; Jun, J.; Kim, M.-H.; Lee, S.-H. Introduction of helical photonic crystal insulator in organic phototransistor for enhancing selective color absorption. Org. Electron. 2022, 100, 106385, DOI: 10.1016/j.orgel.2021.106385 [Crossref], [CAS], Google Scholar 9Park, M. W.; Kim, D.-Y.; An, U.; Jang, J.; Bae, J.-H.; Kang, I. M.; Lee, S.-H. Organizing Reliable Polymer Electrode Lines in Flexible Neural Networks via Coffee Ring-Free Micromolding in Capillaries. ACS Appl. Mater. Interfaces 2022, 14, 46819, DOI: 10.1021/acsami.2c13780 [ACS Full Text ACS Full Text], [CAS], Google Scholar 10Kang, B.; Lee, W. H.; Cho, K. Recent Advances in Organic Transistor Printing Processes. ACS Appl. Mater. Interfaces 2013, 5, 2302, DOI: 10.1021/am302796z [ACS Full Text ACS Full Text], [CAS], Google Scholar 11Choi, J. H.; Pi, J.-E.; Hwang, C.-Y.; Yang, J.-H.; Kim, G. H.; Kim, Y.-H.; Kim, H.-O.; Kwon, O.-S.; Park, E.-S.; Hwang, C.-S. Toward sub-micron oxide thin-film transistors for digital holography. J. Soc. Inf. Dispersion 2017, 25, 126, DOI: 10.1002/jsid.535 [Crossref], Google Scholar 12Kim, M.; Lee, D.-G.; Kim, J.-S.; Yu, B.-C.; Lee, S.-W. Time-dependent color simulation of active-matrix liquid crystal display adopting the field sequential driving method. Displays 2018, 51, 20, DOI: 10.1016/j.displa.2017.10.001 [Crossref], [CAS], Google Scholar 13Choi, W.; Kim, M.-H.; Lee, S.-D. Chemically Compatible Sacrificial Layer-Assisted Lift-Off Patterning Method for Fabrication of Organic Light-Emitting Displays. Jpn. J. Appl. Phys. 2011, 50, 080219, DOI: 10.1143/JJAP.50.080219 [Crossref], [CAS], Google Scholar 14Cho, S. M.; Keum, C.-M.; Park, H.-L.; Kim, M.-H.; Bae, J.-H.; Lee, S.-D. Integrated polymer solar cells in serial architecture with patterned charge-transporting MoOX for miniature high-voltage sources. Jpn. J. Appl. Phys. 2014, 53, 042301, DOI: 10.7567/JJAP.53.042301 [Crossref], [CAS], Google Scholar 15Cho, S.-M.; Park, H.-L.; Kim, M.-H.; Kim, S.-U.; Lee, S.-D. Array of solid-state dye-sensitized solar cells with micropatterned TiO2 nanoparticles for a high-voltage power source. Nanoscale Res. Lett. 2013, 8, 491, DOI: 10.1186/1556-276X-8-491 [Crossref], [PubMed], [CAS], Google Scholar 16Choi, W.; Kim, M.-H.; Na, Y.-J.; Lee, S.-D. Complementary transfer-assisted patterning of high-resolution heterogeneous elements on plastic substrates for flexible electronics. Org. Electron. 2010, 11, 2026, DOI: 10.1016/j.orgel.2010.09.017 [Crossref], [CAS], Google Scholar 17Yu, K.; Lee, S.-H.; Noh, E.-K.; Kim, J.-R.; Lee, B. M.; Kim, D.-S.; Kim, M.-H. High-resolution Continuous Microcontact Printing on Various Substrates for Organic and Oxide Electronics. Flex. Print. Electron. 2021, 6, 025011, DOI: 10.1088/2058-8585/ac0c67 [Crossref], Google Scholar 18Bae, I.; Kang, S. J.; Shin, Y. J.; Park, Y. J.; Kim, R. H.; Mathevet, F.; Park, C. Tailored Single Crystals of Triisopropylsilylethynyl Pentacene by Selective Contact Evaporation Printing. Adv. Mater. 2011, 23, 3398, DOI: 10.1002/adma.201100784 [Crossref], [PubMed], [CAS], Google Scholar 19Bae, I.; Hwang, S. K.; Kim, R. H.; Kang, S. J.; Park, C. Wafer-Scale Arrays of Nonvolatile Polymer Memories with Microprinted Semiconducting Small Molecule/Polymer Blends. ACS Appl. Mater. Interfaces 2013, 5, 10696, DOI: 10.1021/am402852y [ACS Full Text ACS Full Text], [CAS], Google Scholar 20Kim, J. K.; Park, J. W.; Yang, H.; Choi, M.; Choi, J. H.; Suh, K. Y. Low-pressure detachment nanolithography. Nanotechnology 2006, 17, 940, DOI: 10.1088/0957-4484/17/4/017 [Crossref], [PubMed], [CAS], Google Scholar 21Lee, H. M.; Kim, J. J.; Choi, J. H.; Cho, S. O. In Situ Patterning of High-Quality Crystalline Rubrene Thin Films for High-Resolution Patterned Organic Field-Effect Transistors. ACS Nano 2011, 5, 8352, DOI: 10.1021/nn203068q [ACS Full Text ACS Full Text], [CAS], Google Scholar 22Wang, Z.; Zhang, J.; Xing, R.; Yuan, J.; Yan, D.; Han, Y. Micropatterning of Organic Semiconductor Microcrystalline Materials and OFET Fabrication by “Hot Lift Off. J. Am. Chem. Soc. 2003, 125, 15278, DOI: 10.1021/ja036581k [ACS Full Text ACS Full Text], [CAS], Google Scholar 23Packard, C. E.; Aidala, K. E.; Ramanan, S.; Bulovic, V. Patterned Removal of Molecular Organic Films by Diffusion. Langmuir 2011, 27, 9073, DOI: 10.1021/la2016929 [ACS Full Text ACS Full Text], [CAS], Google Scholar 24Yoo, P. J.; Choi, S.-J.; Kim, J. H.; Suh, D.; Baek, S. J.; Kim, T. W.; Lee, H. H. Unconventional Patterning with A Modulus-Tunable Mold: From Imprinting to Microcontact Printing. Chem. Mater. 2004, 16, 5000, DOI: 10.1021/cm049068u [ACS Full Text ACS Full Text], [CAS], Google Scholar 25Yu, J.; Packard, C. E.; Bulović, V. Subtractive contact-patterning of molecular organic films. Org. Electron. 2012, 13, 1779, DOI: 10.1016/j.orgel.2012.05.012 [Crossref], [CAS], Google Scholar 26Choi, J.; Kim, D.; Yoo, P. J.; Lee, H. H. Simple Detachment Patterning of Organic Layers and Its Application to Organic Light-Emitting Diodes. Adv. Mater. 2005, 17, 166, DOI: 10.1002/adma.200400223 [Crossref], [CAS], Google Scholar 27Kim, K.-H.; Yu, H.; Kang, H.; Kang, D. J.; Cho, C.-H.; Cho, H.-H.; Oh, J. H.; Kim, B. J. Influence of intermolecular interactions of electron donating small molecules on their molecular packing and performance in organic electronic devices. J. Mater. Chem. A 2013, 1, 14538, DOI: 10.1039/c3ta13266h [Crossref], [CAS], Google Scholar 28Kim, H.-H.; Gadisa, A.; Schaefer, C.; Yao, H.; Gautam, B.; Balar, N.; Ghasemi, M.; Constantinou, I.; So, F.; O’Connor, B.; Gundogdu, K.; Hou, J.; Ade, H. Strong polymer molecular weight-dependent material interactions: impact on the formation of the polymer/fullerene bulk heterojunction morphology. J. Mater. Chem. A 2017, 5, 13176, DOI: 10.1039/C7TA03052E [Crossref], [CAS], Google Scholar 29Guo, C.J.; De Kee, D.; Harrison, B. Effect of molecular structure on diffusion of organic solvents in rubbers. Chem. Eng. Sci. 1992, 47, 1525, DOI: 10.1016/0009-2509(92)85001-R [Crossref], [CAS], Google Scholar 30Balch, J.; Guéguen, C. Effects of molecular weight on the diffusion coefficient of aquatic dissolved organic matter and humic substances. Chemosphere 2015, 119, 498, DOI: 10.1016/j.chemosphere.2014.07.013 [Crossref], [PubMed], [CAS], Google Scholar Cited By This article has not yet been cited by other publications. Abstract Figure 1 Figure 1. Schematic of the SCP processes: (a) contacting process, which is followed by two patterning mechanisms, namely, (b) delamination and (c) diffusion. Figure 2 Figure 2. Optical microscopic images of the (a) pentacene, (b) TCTA, (c) Alq3, and (d) NPB patterns after the SCP process at 90 °C for 2 min. Figure 3 Figure 3. Surface profiles of the SCP-processed 80 nm thick Alq3 thin film at (a) 50, (b) 90, (c) 130, and (d) 170 °C. Figure 4 Figure 4. Pattern depth versus patterning time during the SCP process of (a) Alq3, (b) TCTA, and (c) NPB. (d) Graph of 1/T versus diffusion speed of the different materials. Figure 5 Figure 5. (a) Schematic of OLED patterned by the SCP process. Optical microscopic images of (b) electroluminescence of 10 μm wide OLED patterns at 6 V and (c) photoluminescence of these patterns. (d) Current density–voltage–luminance characteristics and (e) electroluminescence spectrum of SCP-processed OLED. Figure 6 Figure 6. (a) Optical image of the SCP-processed patterns on a curved glass and (b) optical microscopic image of the corresponding patterns with a width of approximately 7 μm. Optical microscopic images of (c) doped organic semiconductor (NPB:Rb2CO3) and (d) polymer (PEDOT:PSS) after SCP processing for 15 min and 5 h, respectively. Back Partners Atypon Chorus Cope publication ethics Project Counter Crossref Crossref similarity check Orcid Connecting Research and Researchers Portico digital preservation service ACS Publications 1155 Sixteenth Street N.W. Washington, DC 20036 Copyright © 2023 American Chemical Society About About ACS Publications ACS & Open Access ACS Membership ACS Publications Blog Resources and Information Journals A-Z Books and Reference Advertising Media Kit Institutional Sales ACS Publishing Center Privacy Policy Terms of Use Support & Contact Help Live Chat FAQ Connect with ACS Publications This website uses cookies to improve your user experience. By continuing to use the si