논문 해외 국제전문학술지(SCI급) Molecular Subtractive Surface-Energy Engineering of Crosslinked Poly(4-vinylphenol) Insulators for a Solution-Processed Organic Thin-Film Transistor
- 학술지 구분 국제전문학술지(SCI급)
- 게재년월 2021-12
- 저자명 J. -H. Kwon, J. Lee, M. H. Kim, J. -H. Bae, and J. Park
- 학술지명 Organic Electronics
- 발행처명 ScienceDirect
- 발행국가 해외
- 논문언어 외국어
- 전체저자수 5
홈페이지논문 초록 (Abstract)
We propose a feasible method of manipulating the surface energy of crosslinked poly(4-vinylphenol) (c-PVP) thin films through the surface compositional modification assisted by an etchant. A physical picture of the surface-energy manipulation of c-PVP thin films based on the surface-selective molecular subtractive approach is clarified by investigating the chemical composition of the c-PVP film surfaces. We reveal that the molecular detachment by solvation on the surface leads to a reduction in the surface PVP density, thereby decreasing residual hydroxyl groups on the surface. In particular, it is found that the surface energy of a c-PVP thin film can be controlled by exploiting the thermal-treatment-time dependence of the soluble-PVP density. Organic thin-film transistors (TFTs) are fabricated via a solution process for demonstrating the applicability of our surface-energy-engineered c-PVP film as a gate insulator. The TFTs with the engineered c-PVP gate insulators exhibit improved electrical characteristics, compared to those with ordinary c-PVP gate insulators.